PART |
Description |
Maker |
RM20CA-XXS RM20C1A-XXS RM20DA-XXS |
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE 中功率,高频率使用的绝缘
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BCR16A BCR16B BCR16C BCR16E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE A, B, C : NON-INSULATED TYPE E : INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
CM10MD-24H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM30DY-HB QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
TM20DA-H TM20DA-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
QM50DY-2H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Sem... Mitsubishi Electric Semiconductor
|
QM30CY-H QM30 |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M |
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
|